New Applications for Wide-Bandgap Semiconductors
by Baca, A. G.; Chang, W. H.; Chyi, J. I.; Han, J.Format: Hardcover
Pub. Date: 2003-09-29
Publisher(s): Cambridge Univ Pr
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Summary
Wide-bandgap semiconductors such as SiC, GaN and related alloys, BN and related alloys, ZnGeSiN2, ZnO, and others continue to find new applications in solid-state lighting, sensors, filters, high-power electronics, biological detection, and spintronics. Improved bulk and epitaxial growth, processing, device design, and understanding of the physics of transport in heterostructures are all necessary for realization of these new technologies. The papers in this book span a range of subjects from material growth and characterization to the processing and application of devices in the electronic, as well as the optoelectronic, fields. Topics include: special invited papers; growth, processing and devices; novel applications for wide-bandgap semiconductors; oxides, heterostructures and devices; processing and devices and emerging areas.
Table of Contents
| Preface | p. xiii |
| Materials Research Society Symposium Proceedings | p. xiv |
| Special Invited Session | |
| Silicon Carbide Power Devices and Processing | p. 3 |
| Challenges for High Temperature Silicon Carbide Electronics | p. 15 |
| Growth, Processing, Devices | |
| Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy | p. 29 |
| AlGaN/GaN Structures Grown by HVPE: Growth and Characterization | p. 39 |
| HVPE-Grown AlGaN/GaN HEMTs | p. 45 |
| The Effects of Sapphire Surface Treatments and Nitridation on GaN Nucleation Grown Using Hydride Vapor Phase Epitaxy | p. 57 |
| MOCVD Growth of AIN/GaN DBR Structure Under Various Ambient Conditions | p. 63 |
| 4H-SiC DMOSFETs for High Frequency Power Switching Applications | p. 69 |
| Laser Direct-Metallization of Silicon Carbide Without Metal Deposition | p. 75 |
| In Situ SEM Observations and Electrical Measurements During the Annealing of Si/Ni Contacts to SiC | p. 81 |
| Novel Applications for Wide Bandgap Semiconductors | |
| Influence of Indium Incorporation on Recombination Dynamics in AlInGaN Layers Grown by Pulsed Metal Organic Chemical Vapor Deposition | p. 89 |
| The Investigation of Preferred Orientation Growth of ZnO Films on the Ceramic Substrates | p. 95 |
| Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by ARHVTEM and Ab Initio Calculation | p. 111 |
| MOCVD Zinc Oxide Films for Wide Bandgap Applications | p. 117 |
| Effect of Si Layer in the ZnO Thin Films by Pulsed Laser Deposition | p. 123 |
| Fabrication and Characterization of ZnO and ZnO: Mn Nanocrystalline Thin Films | p. 129 |
| TEM Studies and Contact Resistance of Au/Ni/Ti/Ta/n-GaN Ohmic Contacts | p. 135 |
| Cathodoluminescence, Electroluminescence, and Degradation of ZnCdSe QuantumWell Light Emitting Diodes | p. 141 |
| Effect of Mn Doping in ZnO Thin Films Deposited by Pulsed Laser Deposition | p. 147 |
| The Refractive Index and Other Properties of Doped ZnO Films | p. 153 |
| High-Performance AlGaN-Based Visible-Blind Resonant Cavity Enhanced Schottky Photodiodes | p. 159 |
| Optical and Structural Investigation of AIN Grown on Sapphire With Reactive MBE Using RF Nitrogen or Ammonia | p. 165 |
| Self-Assembled InP Quantum Dot-TiO[subscript 2] Solid Gratzel Solar Cell | p. 171 |
| Statistical Analysis of Micropipe Defect Distributions in Silicon Carbide Crystals | p. 177 |
| Barrier Material Improvement in AlGaN/GaN Microwave Transistors Under Gamma Irradiation Treatment | p. 183 |
| Characterization of High Quality Continuous GaN Films Grown on Si-Doped Cracked GaN Template | p. 189 |
| Structural and Optical Properties of InGaN/GaN Multi-Quantum Well Structures With Different Indium Compositions | p. 197 |
| Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior | p. 203 |
| Transient Capacitance Characterization of Deep Levels in Undoped and Si-Doped GaN | p. 209 |
| Modeling of Thermal Conductivity of Polycrystalline GaN Films | p. 215 |
| Influence of Ion Energy on the Reactive Ion Etching Induced Optical Damage of Gallium Nitride | p. 221 |
| Modeling of Nitride Semiconductor Based Double Heterostructure Tunnel Diodes | p. 227 |
| High Reflectivity AlGaN/GaN Bragg Mirrors Grown by MOCVD for Microcavities Applications | p. 233 |
| Er Doped GaN by Gas Source Molecular Beam Epitaxy on GaN Templates | p. 239 |
| ZnO Thin Films Grown at Various Substrate Angles by Pulsed Laser Deposition | p. 245 |
| Low Ohmic Contact Resistance of GaN by Employing XeCl Excimer Laser | p. 251 |
| Time of Flight of Drifting Electrons and Holes in Stabilized a-Se film | p. 257 |
| Experimental Evaluation of a-Se Flat-Panel X-ray Detector for Digital Radiography | p. 265 |
| Optical and Electrical Characterization of Annealed Silicon-Implanted GaN | p. 271 |
| Thermal Boundary Resistance and Heat Diffusion in AlGaN/GaN HFETs | p. 277 |
| Investigation of Thin Film Growth of B[subscript 12]As[subscript 2] by Chemical Vapor Deposition | p. 283 |
| Oxides, Heterostructures, Devices | |
| Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface | p. 291 |
| Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures | p. 305 |
| Solar Blind (Al,Ga)N Metal-Semiconductor-Metal Devices for High Performance Flame Detection | p. 315 |
| GaP-Based MIS Capacitors Using a SiN Gate Dielectric | p. 321 |
| Abnormal Rectifying Characteristics of a Mg Doped GaN Schottky Diode | p. 327 |
| Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs) | p. 333 |
| Processing and Devices | |
| Electron Injection-Induced Effects in GaN: Physics and Applications | p. 341 |
| Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes | p. 349 |
| High-Speed Solar-Blind AlGaN Schottky Photodiodes | p. 355 |
| Emerging Areas | |
| First AlGaN Free-Standing Wafers | p. 363 |
| Structural Properties of Free-Standing 50 mm Diameter GaN Wafers With (1010) Orientation Grown on LiAlO[subscript 2] | p. 369 |
| Stimulated Emission at 258 nm in AlN/AlGaN QuantumWells Grown on Bulk AIN Substrates | p. 375 |
| Surface Acoustic Waves and Guided Optical Waves in AlGaN Films | p. 381 |
| Processing, Growth, Devices | |
| Large Area 6H- and 4H-SiC Photoconductive Switches | p. 389 |
| Investigation of Epitaxial GaN Films by Conductive Atomic Force Microscopy | p. 395 |
| GaN Epitaxial Growth by Molecular Beam Epitaxy Utilizing AlGaN Buffer Layer With Nanopipes | p. 401 |
| GaN Growth on Si Using ZnO Buffer Layer | p. 407 |
| Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition | p. 413 |
| Cathodoluminescence Study of Gadolinium-Doped Yttrium Oxide Thin Films Deposited By Radio-Frequency Magnetron Sputtering | p. 419 |
| Author Index | p. 425 |
| Subject Index | p. 429 |
| Table of Contents provided by Ingram. All Rights Reserved. |
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